Mathematical Modelling of Microelectronics Semiconductor Devices Acknowledgments: This Work Originates from Lecture Notes of Courses
نویسنده
چکیده
This paper rst reviews some basic facts about electron transport in semiconductor materials. Then, it develops several macroscopic models from the diiusion approximation of the semiconductor Boltz-mann equation. The rst model to be derived is the 'Spherical Harmonics Expansion model', which consists of a parabolic equation for the energy distribution function. A second model is then deduced, known as the 'Energy-Transport' model, of which the standard 'Drift-Diiusion' model is a submodel. It consists of a parabolic system for the electron density and energy. Various properties of these models are investigated.
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تاریخ انتشار 1999